Graphene based FETs
نویسنده
چکیده
The extraordinary electronic properties along with excellent optical, mechanical, thermodynamic properties have led to a lot of interest in its possible applications. Due to zero band gap in large area Graphene, its usability as channel material in MOSFETs has been limited. This paper presents the basic physics of Graphene and describes a few methods used by researchers to create band gaps in Graphene. A few implementations of Graphene in FETs and their results are also presented along with a model for the current and charge densities in top gated Large Area Graphene FETs.
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